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High-speed random access eDRAM
NEC Electronics' unique MIM capacitors make our eDRAM random access speed significantly faster than that of other eDRAM.
Our 90 nm eDRAM is making random access speed of 250-MHz possible even under the worst-case conditions (VDD=0.9V, Tj=105 °C, worst-case process). For the 40 nm generation, NEC Electronics' eDRAM can support a random access speed exceeding 250-MHz at 0.9V.
These eDRAM technologies also offer straightforward interfacing with SRAM-like access. At the beginning of the clock cycle (T=0), you can set any row and column address. Further, you can do either a READ or WRITE operation within the same clock cycle. With this configuration and our high-speed eDRAM cell, our 90 nm eDRAM can process at a speed of 250 MHz. In contrast, conventional eDRAM is limited to an equivalent random access speed of about 20 MHz due to the idle clock cycles (latency) involved in getting initial data.
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